symbol v ds v gs i dm i ar e ar t j , t stg symbol typ max 31 40 59 75 r jl 16 24 junction and storage temperature range a p d c 3 2.1 -55 to 150 t a =70c mj 34 continuous drain current af maximum units parameter t a =25c t a =70c 30 gate-source voltage w drain-source voltage maximum junction-to-ambient a steady-state 8.5 7.1 60 avalanche current b repetitive avalanche energy 0.3mh b i d 15 c/w c/w absolute maximum ratings t a =25c unless otherwise noted v v 12 pulsed drain current b power dissipation t a =25c a maximum junction-to-lead c steady-state c/w thermal characteristics parameter units maximum junction-to-ambient af t 10s r ja ao4404 n-channel enhancement mode field effect transistor features v ds (v) = 30v i d = 8.5a (v gs = 10v) r ds(on) < 24m ? (v gs = 10v) r ds(on) < 30m ? (v gs = 4.5v) r ds(on) < 48m ? (v gs = 2.5v) uis tested! rg,ciss,coss,crss tested general description the ao4404/l uses advanced trench technology to provide excellent r ds(on) , low gate charge and operation with gate voltages as low as 2.5v. this device is suitable for use as a load switch or in pwm applications. the source leads are separated to allow a kelvin connection to the source, which may be used to bypass the source inductance. ao4404 and a o4404l are electrically identical. -rohs compliant -ao4404l is halogen free soic-8 g s s s d d d d g d s alpha & omega semiconductor, ltd. www.aosmd.com
ao4404 symbol min typ max units bv dss 30 v 1 t j =55c 5 i gss 100 na v gs(th) 0.7 1 1.4 v i d(on) 40 a 20.5 24 t j =125c 30 36 25 30 m ? 40 48 m ? g fs 10 16 s v sd 0.71 1 v i s 4.3 a c iss 857 1050 pf c oss 97 pf c rss 71 100 pf r g 0.7 1.4 2 ? q g 9.7 12 nc q gs 1.63 nc q gd 3.1 nc t d(on) 3.3 5 ns t r 4.7 7 ns t d(off) 26 39 ns t f 4.1 6.2 ns t rr 15 20 ns q rr 8.6 12 nc this product has been designed and qualified for the consumer market. applications or uses as critical components in life support devices or systems are not authorized. aos does not assume any liability arising out of such applications or uses of its products. aos reserves the right to improve product design, functions and reliability without notice. gate resistance v gs =0v, v ds =0v, f=1mhz turn-off fall time maximum body-diode continuous current input capacitance output capacitance turn-on delaytime dynamic parameters i f =5a, di/dt=100a/ s v gs =0v, v ds =15v, f=1mhz switching parameters total gate charge v gs =4.5v, v ds =15v, i d =8.5a gate source charge gate drain charge turn-on rise time turn-off delaytime v gs =10v, v ds =15v, r l =1.8 ? , r gen =6 ? m ? v gs =4.5v, i d =8.5a i s =1a,v gs =0v v ds =5v, i d =5a r ds(on) static drain-source on-resistance forward transconductance diode forward voltage i dss a gate threshold voltage v ds =v gs i d =250 a v ds =30v, v gs =0v v ds =0v, v gs = 12v zero gate voltage drain current gate-body leakage current electrical characteristics (t j =25c unless otherwise noted) static parameters parameter conditions body diode reverse recovery time body diode reverse recovery charge i f =5a, di/dt=100a/ s drain-source breakdown voltage on state drain current i d =250 a, v gs =0v v gs =2.5v, i d =5a v gs =4.5v, v ds =5v v gs =10v, i d =8.5a reverse transfer capacitance a: the value of r ja is measured with the device mounted on 1in 2 fr-4 board with 2oz. copper, in a still air environment with t a =25c. the value in any given application depends on the user's specific board design. b: repetitive rating, pulse width limited by junction temperature. c. the r ja is the sum of the thermal impedence from junction to lead r jl and lead to ambient. d. the static characteristics in figures 1 to 6 are obtained using <300 s pulses, duty cycle 0.5% max. e. these tests are performed with the device mounted on 1 in 2 fr-4 board with 2oz. copper, in a still air environment with t a =25c. the soa curve provides a single pulse rating. f. the current rating is based on the t 10s junction to ambient thermal resistance rating. rev10:may 2008 alpha & omega semiconductor, ltd. www.aosmd.com
ao4404 typical electrical and thermal characteristics this product has been designed and qualified for the consumer market. applications or uses as critical components in life support devices or systems are not authorized. aos does not assume any liability arisin g out of such applications or uses of its products. aos reserves the right to improve product design, functions and reliability without notice. 0 5 10 15 20 25 30 012345 v ds (volts) fig 1: on-region characteristics i d (a) v gs =1.5v 2v 2.5v 3v 4.5v 10v 0 4 8 12 16 20 0 0.5 1 1.5 2 2.5 3 v gs (volts) figure 2: transfer characteristics i d (a) 10 20 30 40 50 60 0 5 10 15 20 i d (a) figure 3: on-resistance vs. drain current and gate voltage r ds(on) (m ? ) 1.0e-06 1.0e-05 1.0e-04 1.0e-03 1.0e-02 1.0e-01 1.0e+00 1.0e+01 0.0 0.2 0.4 0.6 0.8 1.0 1.2 v sd (volts) figure 6: body-diode characteristics i s (a) 25c 125c 0.8 1 1.2 1.4 1.6 1.8 0 25 50 75 100 125 150 175 temperature (c) figure 4: on-resistance vs. junction temperature normalized on-resistance v gs =2.5v v gs =10v v gs =4.5v 10 20 30 40 50 60 70 80 90 100 0246810 v gs (volts) figure 5: on-resistance vs. gate-source voltage r ds(on) (m ? ) 25c 125c v ds =5v v gs =2.5v v gs =4.5v v gs =10v i d =5a 25c 125c alpha & omega semiconductor, ltd. www.aosmd.com
ao4404 typical electrical and thermal characteristics this product has been designed and qualified for the consumer market. applications or uses as critical components in life support devices or systems are not authorized. aos does not assume any liability arisin g out of such applications or uses of its products. aos reserves the right to improve product design, functions and reliability without notice. 0 1 2 3 4 5 024681012 q g (nc) figure 7: gate-charge characteristics v gs (volts) 0 200 400 600 800 1000 1200 1400 0 5 10 15 20 25 30 v ds (volts) figure 8: capacitance characteristics capacitance (pf) c iss 0 10 20 30 40 50 0.001 0.01 0.1 1 10 100 1000 pulse width (s) figure 10: single pulse power rating junction-to- ambient (note e) power (w) 0.01 0.1 1 10 0.00001 0.0001 0.001 0.01 0.1 1 10 100 1000 pulse width (s) figure 11: normalized maximum transient thermal impedance z ja normalized transient thermal resistance c oss c r ss 0.1 1.0 10.0 100.0 0.1 1 10 100 v ds (volts) i d (amps) figure 9: maximum forward biased safe operating area (note e) 100 s 1 0 m s 1ms 0.1s 1s 10s d c r ds(on) limited t j(max) =150c t a =25c v ds =15v i d =8.5a single pulse d=t on /t t j,pk =t a +p dm .z ja .r ja r ja =40c/w t on t p d in descending order d=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse t j(max) =150c t a =25c alpha & omega semiconductor, ltd. www.aosmd.com
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